NDT454P【PDF 3/7 页】MOSFET P-CH 30V 5.9A SOT-223

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Sheet目录484

1页 2页 [3页]4页 5页 6页 7页

Electrical Characteristics (T A = 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I S

Maximum Continuous Drain-Source Diode Forward Current

-1.9

V SD

Drain-Source Diode Forward Voltage

V GS = 0 V, I S = -5.9 A

(Note 2)

-0.85

-1.3

t rr

Reverse Recovery Time

V GS = 0V, I F = -5.9 A, dI F /dt = 100 A/μs

100

Notes:

1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed by

design while R θ CA is determined by the user's board design.

P D ( t ) =

T J ? T A

R θ JA ( t )

T J ? T A

R θ JC + R θ CA ( t )

= I 2 D ( t ) × R DS ( ON )

T J

Typical R θ JA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 42 o C/W when mounted on a 1 in 2 pad of 2oz copper.

b. 95 o C/W when mounted on a 0.066 in 2 pad of 2oz copper.

c. 110 o C/W when mounted on a 0.0123 in 2 pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.

NDT454P Rev. D2

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